Invention Grant
US07767499B2 Method to form upward pointing p-i-n diodes having large and uniform current
有权
形成向上指向具有大且均匀电流的p-i-n二极管的方法
- Patent Title: Method to form upward pointing p-i-n diodes having large and uniform current
- Patent Title (中): 形成向上指向具有大且均匀电流的p-i-n二极管的方法
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Application No.: US11692151Application Date: 2007-03-27
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Publication No.: US07767499B2Publication Date: 2010-08-03
- Inventor: S. Brad Herner
- Applicant: S. Brad Herner
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: Dugan & Dugan, P.C.
- Main IPC: H01L21/82
- IPC: H01L21/82 ; H01L21/336
Abstract:
A method is disclosed to form an upward-pointing p-i-n diode formed of deposited silicon, germanium, or silicon-germanium. The diode has a bottom heavily doped p-type region, a middle intrinsic or lightly doped region, and a top heavily doped n-type region. The top heavily doped p-type region is doped with arsenic, and the semiconductor material of the diode is crystallized in contact with an appropriate silicide, germanide, or silicide-germanide. A large array of such upward-pointing diodes can be formed with excellent uniformity of current across the array when a voltage above the turn-on voltage of the diodes is applied. This diode is advantageously used in a monolithic three dimensional memory array.
Public/Granted literature
- US20070190722A1 METHOD TO FORM UPWARD POINTING P-I-N DIODES HAVING LARGE AND UNIFORM CURRENT Public/Granted day:2007-08-16
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