Invention Grant
- Patent Title: Polycrystalline silicon thin film, fabrication method thereof, and thin film transistor without directional dependency on active channels fabricated using the same
- Patent Title (中): 多晶硅薄膜，其制造方法和薄膜晶体管，而不依赖于使用其制造的有源沟道
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Application No.: US11655168Application Date: 2007-01-19
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Publication No.: US07767507B2Publication Date: 2010-08-03
- Inventor: Ji Yong Park , Hye Hyang Park
- Applicant: Ji Yong Park , Hye Hyang Park
- Applicant Address: KR Suwon-si
- Assignee: Samsung Mobile Display Co., Ltd.
- Current Assignee: Samsung Mobile Display Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Stein McEwen, LLP
- Priority: KR2003-13829 20030305
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A polycrystalline silicon thin film to be used in display devices, the thin film having adjacent primary grain boundaries that are not parallel to each other, wherein an area surrounded by the primary grain boundaries is larger than 1 μm2, a fabrication method of the polycrystalline silicon thin film, and a thin film transistor fabricated using the method.
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