Invention Grant
US07767509B2 Methods of forming a multilayer capping film to minimize differential heating in anneal processes
有权
形成多层封盖膜以最小化退火工艺中的差分加热的方法
- Patent Title: Methods of forming a multilayer capping film to minimize differential heating in anneal processes
- Patent Title (中): 形成多层封盖膜以最小化退火工艺中的差分加热的方法
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Application No.: US11692366Application Date: 2007-03-28
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Publication No.: US07767509B2Publication Date: 2010-08-03
- Inventor: Mark Liu , Rob James , Jake Jensen , Karson Knutson
- Applicant: Mark Liu , Rob James , Jake Jensen , Karson Knutson
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Kathy J. Ortiz
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
Methods and associated structures of forming a microelectronic device are described. Those methods may include implanting the source/drain region, forming a multilayer cap on the source/drain region, annealing the source/drain region, and removing the multilayer cap.
Public/Granted literature
- US20080242038A1 METHODS OF FORMING A MULTILAYER CAPPING FILM TO MINIMIZE DIFFERENTIAL HEATING IN ANNEAL PROCESSES Public/Granted day:2008-10-02
Information query
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