A method for producing a vertical transistor component includes steps of providing a semiconductor substrate, applying an auxiliary layer to the semiconductor substrate, and patterning the auxiliary layer for the purpose of producing at least one trench which extends as far as the semiconductor substrate and which has opposite sidewalls. The method further includes producing a monocrystalline semiconductor layer on at least one of the sidewalls of the trench, producing an electrode insulated from the monocrystalline semiconductor layer on the at least one sidewall of the trench and the semiconductor substrate.