It is made possible to form a silicon nitride film, an aluminum oxide film and a transition metal high-k insulation film of high quality. A manufacturing method includes: forming an insulation film having at least one kind of bonds selected out of silicon-nitrogen bonds, aluminum-oxygen bonds, transition metal-oxygen-silicon bonds, transition metal-oxygen-aluminum bonds, and transition metal-oxygen bonds on either a film having a semiconductor as a main component or a semiconductor substrate, and irradiating the insulation film with pulse infrared light having a wavelength corresponding to a maximum intensity in a wavelength region depending upon the insulation film and having a wavelength absorbed by the insulation film.