Invention Grant
US07767539B2 Method of fabricating patterned SOI devices and the resulting device structures
失效
制造图案化SOI器件的方法和所得到的器件结构
- Patent Title: Method of fabricating patterned SOI devices and the resulting device structures
- Patent Title (中): 制造图案化SOI器件的方法和所得到的器件结构
-
Application No.: US11949973Application Date: 2007-12-04
-
Publication No.: US07767539B2Publication Date: 2010-08-03
- Inventor: Robert J. Gauthier, Jr. , Rajendran Krishnasamy
- Applicant: Robert J. Gauthier, Jr. , Rajendran Krishnasamy
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Edward W. Brown
- Main IPC: H01L21/762
- IPC: H01L21/762
Abstract:
A method and resulting structure for fabricating a FET transistor for an integrated circuit on a silicon oxide (SOI) substrate comprising the steps of forming recesses in a substrate on both sides of a gate on the substrate, implanting oxygen ions into the recesses, and annealing the substrate to convert the oxygen ions into a SOI layer below each recess.
Public/Granted literature
- US20090140338A1 METHOD OF FABRICATING PATTERNED SOI DEVICES AND THE RESULTING DEVICE STRUCTURES Public/Granted day:2009-06-04
Information query
IPC分类:
