Invention Grant
US07767540B2 Transistor having a channel with tensile strain and oriented along a crystallographic orientation with increased charge carrier mobility
有权
晶体管具有具有拉伸应变的通道并沿着具有增加的电荷载流子迁移率的晶体取向定向
- Patent Title: Transistor having a channel with tensile strain and oriented along a crystallographic orientation with increased charge carrier mobility
- Patent Title (中): 晶体管具有具有拉伸应变的通道并沿着具有增加的电荷载流子迁移率的晶体取向定向
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Application No.: US11567268Application Date: 2006-12-06
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Publication No.: US07767540B2Publication Date: 2010-08-03
- Inventor: Igor Peidous , Thorsten Kammler , Andy Wei
- Applicant: Igor Peidous , Thorsten Kammler , Andy Wei
- Applicant Address: US TX Austin
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US TX Austin
- Agency: Williams, Morgan & Amerson, P.C.
- Priority: DE102006019835 20060428
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
By appropriately orienting the channel length direction with respect to the crystallographic characteristics of the silicon layer, the stress-inducing effects of strained silicon/carbon material may be significantly enhanced compared to conventional techniques. In one illustrative embodiment, the channel may be oriented along the direction for a (100) surface orientation, thereby providing an electron mobility increase of approximately a factor of four.
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