Invention Grant
- Patent Title: Semiconductor fabrication method and system
- Patent Title (中): 半导体制造方法和系统
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Application No.: US11786609Application Date: 2007-04-12
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Publication No.: US07767544B2Publication Date: 2010-08-03
- Inventor: Swarnal Borthakur
- Applicant: Swarnal Borthakur
- Applicant Address: US ID Boise
- Assignee: Micron Technology Inc.
- Current Assignee: Micron Technology Inc.
- Current Assignee Address: US ID Boise
- Agency: Fletcher Yoder P.C.
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46 ; H01L21/50 ; H01L21/48 ; H01L21/44

Abstract:
Embodiments of the present invention are generally directed to a method for manufacturing a semiconductor device. In one embodiment, the method includes providing a substrate that includes a via or interconnect. In this embodiment, the method also includes forming a sealed array, in which forming such an array includes attaching a carrier to a first surface of the substrate to form a sealed cavity between the carrier and the substrate. Further, the method of this embodiment also includes forming a redistribution layer on the sealed array over a second surface of the substrate. Devices and systems having a carrier attached to a substrate are also disclosed.
Public/Granted literature
- US20080251871A1 Semiconductor fabrication method and system Public/Granted day:2008-10-16
Information query
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