Invention Grant
- Patent Title: Substrate production method and substrate including amorphization and recrystallizing a top region
- Patent Title (中): 底物生产方法和底物包括非晶化和重结晶顶部区域
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Application No.: US11910104Application Date: 2006-03-29
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Publication No.: US07767545B2Publication Date: 2010-08-03
- Inventor: Konstantin Bourdelle , Carlos Mazure
- Applicant: Konstantin Bourdelle , Carlos Mazure
- Applicant Address: FR Bernin
- Assignee: S.O.I.Tec Silicon on Insulator Technologies
- Current Assignee: S.O.I.Tec Silicon on Insulator Technologies
- Current Assignee Address: FR Bernin
- Agency: Winston & Strawn LLP
- Priority: FR0503174 20050331
- International Application: PCT/EP2006/061142 WO 20060329
- International Announcement: WO2006/103256 WO 20061005
- Main IPC: H01L21/46
- IPC: H01L21/46 ; H01L21/04
Abstract:
A process for the manufacture of a substrate having a top layer of a first material and an underlying layer of a second material whose lattice parameter is different from that of the first material. The process includes the steps of conducting an amorphization of the top layer to create an amorphous region in the top layer lying between an exposed surface and an amorphization interface, with that portion of the top layer below the interface being shielded from the amorphization and remaining as a crystalline structure; recrystallizing the amorphous region while also creating a network of defects at the interface, wherein the network forms a boundary for dislocations from the crystalline structure of the top layer, and containing the dislocations in the portion of the top layer that is located below the interface. Also, the substrates obtained by the method.
Public/Granted literature
- US20080303061A1 Substrate Production Method and Substrate Public/Granted day:2008-12-11
Information query
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