Invention Grant
- Patent Title: Wafer laser processing method and laser processing equipment
- Patent Title (中): 晶圆激光加工方法和激光加工设备
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Application No.: US12018663Application Date: 2008-01-23
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Publication No.: US07767550B2Publication Date: 2010-08-03
- Inventor: Hiroshi Morikazu
- Applicant: Hiroshi Morikazu
- Applicant Address: JP Tokyo
- Assignee: Disco Corporation
- Current Assignee: Disco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP2007-025352 20070205
- Main IPC: H01L21/301
- IPC: H01L21/301
Abstract:
A wafer laser processing method for forming a groove in a wafer having a plurality of areas which are sectioned by streets formed in a lattice pattern on the front surface of a substrate, a device being formed in each of the plurality of areas, and an insulating film being formed on the surfaces of the devices, by applying a pulse laser beam along the streets, the method comprising a heating step for applying a first pulse laser beam set to an output for preheating the insulating film so as to soften it to the insulating film and a processing step for applying a second pulse laser beam set to an output for processing the insulating film and the substrate to the spot position of the first pulse laser beam applied in the heating step, the heating step and the processing step being carried out along the streets alternately.
Public/Granted literature
- US20080242055A1 WAFER LASER PROCESSING METHOD AND LASER PROCESSING EQUIPMENT Public/Granted day:2008-10-02
Information query
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