Invention Grant
- Patent Title: Process for fabricating semiconductor device
- Patent Title (中): 半导体器件制造工艺
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Application No.: US12269294Application Date: 2008-11-12
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Publication No.: US07767559B2Publication Date: 2010-08-03
- Inventor: Hisashi Ohtani , Takeshi Fukunaga , Akiharu Miyanaga
- Applicant: Hisashi Ohtani , Takeshi Fukunaga , Akiharu Miyanaga
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP6-145575 19940602; JP6-165930 19940623; JP7-128921 19950428
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36 ; H01L21/00 ; H01L21/84
Abstract:
A process for fabricating a semiconductor device comprising the steps of: introducing into an amorphous silicon film, a metallic element which accelerates the crystallization of the amorphous silicon film; applying heat treatment to the amorphous silicon film to obtain a crystalline silicon film; irradiating a laser beam or an intense light to the crystalline silicon film; and heat treating the crystalline silicon film irradiated with a laser beam or an intense light.
Public/Granted literature
- US20090075460A1 PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2009-03-19
Information query
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