Invention Grant
US07767561B2 Plasma immersion ion implantation reactor having an ion shower grid
失效
具有离子喷淋格栅的等离子体浸没离子注入反应器
- Patent Title: Plasma immersion ion implantation reactor having an ion shower grid
- Patent Title (中): 具有离子喷淋格栅的等离子体浸没离子注入反应器
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Application No.: US10896113Application Date: 2004-07-20
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Publication No.: US07767561B2Publication Date: 2010-08-03
- Inventor: Hiroji Hanawa , Tsutomu Tanaka , Kenneth S. Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
- Applicant: Hiroji Hanawa , Tsutomu Tanaka , Kenneth S. Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Law Office of Robert M. Wallace
- Main IPC: H01L21/425
- IPC: H01L21/425
Abstract:
A plasma immersion ion implantation process for implanting a selected species at a desired ion implantation depth profile in a workpiece is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural elongate orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid.
Public/Granted literature
- US20060019477A1 Plasma immersion ion implantation reactor having an ion shower grid Public/Granted day:2006-01-26
Information query
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