发明授权
US07767561B2 Plasma immersion ion implantation reactor having an ion shower grid
失效
具有离子喷淋格栅的等离子体浸没离子注入反应器
- 专利标题： Plasma immersion ion implantation reactor having an ion shower grid
- 专利标题（中）： 具有离子喷淋格栅的等离子体浸没离子注入反应器
-
申请号： US10896113申请日： 2004-07-20
-
公开(公告)号： US07767561B2公开(公告)日： 2010-08-03
- 发明人: Hiroji Hanawa , Tsutomu Tanaka , Kenneth S. Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
- 申请人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth S. Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Law Office of Robert M. Wallace
- 主分类号： H01L21/425
- IPC分类号： H01L21/425
摘要：
A plasma immersion ion implantation process for implanting a selected species at a desired ion implantation depth profile in a workpiece is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural elongate orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid.
公开/授权文献
信息查询
IPC分类:
