Methods of forming a barrier layer in an interconnect structure

Invention Grant

US07767572B2 Methods of forming a barrier layer in an interconnect structure 有权

Title translation: 在互连结构中形成阻挡层的方法

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Patent Title: Methods of forming a barrier layer in an interconnect structure
Patent Title (中): 在互连结构中形成阻挡层的方法
Application No.: US12035042

Application Date: 2008-02-21
Publication No.: US07767572B2

Publication Date: 2010-08-03
Inventor: Chong Jiang , Anthony Chih-Tung Chan
Applicant: Chong Jiang , Anthony Chih-Tung Chan
Applicant Address: US CA Santa Clara
Assignee: Applied Materials, Inc.
Current Assignee: Applied Materials, Inc.
Current Assignee Address: US CA Santa Clara
Agency: Patterson & Sheridan, LLP
Main IPC: H01L21/44
IPC: H01L21/44

Methods of forming a barrier layer in an interconnect structure

Abstract:

Methods of forming a barrier layer for an interconnection structure are provided. In one embodiment, a method for forming an interconnect structure includes providing a substrate having a first conductive layer disposed thereon, incorporating oxygen into an upper portion of the first conductive layer, depositing a first barrier layer on the first conductive layer, and diffusing the oxygen incorporated into the upper portion of the first conductive layer into a lower portion of the first barrier layer. In another embodiment, a method for forming an interconnection structure includes providing a substrate having a first conductive layer disposed thereon, treating an upper surface of the first conductive layer with an oxygen containing gas, depositing a first barrier layer on the treated conductive layer, and depositing a second conductive layer on the first barrier layer while driving a portion of oxygen atoms from the treated conductive layer into the first barrier layer.

Abstract(Chinese):

提供形成用于互连结构的阻挡层的方法。在一个实施例中，一种用于形成互连结构的方法包括提供其上设置有第一导电层的衬底，将氧合并入第一导电层的上部，在第一导电层上沉积第一阻挡层，并入第一导电层的上部，形成第一阻挡层的下部。在另一个实施例中，形成互连结构的方法包括提供一个其上设置有第一导电层的衬底，用含氧气体处理第一导电层的上表面，在经处理的导电层上沉积第一阻挡层，以及在第一阻挡层上沉积第二导电层，同时将氧原子的一部分从被处理的导电层驱动到第一阻挡层中。

Public/Granted literature

US20090215260A1 METHODS OF FORMING A BARRIER LAYER IN AN INTERCONNECT STRUCTURE Public/Granted day:2009-08-27

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/44	....用H01L21/36至H01L21/428各组不包含的方法或设备在半导体材料上制造电极的