Invention Grant
- Patent Title: Protection of SiGe during etch and clean operations
- Patent Title (中): 在蚀刻和清洁操作期间保护SiGe
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Application No.: US11954802Application Date: 2007-12-12
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Publication No.: US07767579B2Publication Date: 2010-08-03
- Inventor: Ashima B Chakravarti , Zhijiong Luo , Renee Tong Mo , Shreesh Narasimha , Katsunori Onishi
- Applicant: Ashima B Chakravarti , Zhijiong Luo , Renee Tong Mo , Shreesh Narasimha , Katsunori Onishi
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Joseph Petrokaitis
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/31 ; H01L21/469
Abstract:
A method of making a semiconductor device includes forming a transistor structure having one of an embedded epitaxial stressed material in a source and drain region and a stressed channel and well, subjecting the transistor structure to plasma oxidation, and removing spacer material from the transistor structure.
Public/Granted literature
- US20090155969A1 PROTECTION OF SIGE DURING ETCH AND CLEAN OPERATIONS Public/Granted day:2009-06-18
Information query
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