Invention Grant
- Patent Title: Method to improve uniformity of chemical mechanical polishing planarization
- Patent Title (中): 提高化学机械抛光平整度均匀性的方法
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Application No.: US12331937Application Date: 2008-12-10
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Publication No.: US07767583B2Publication Date: 2010-08-03
- Inventor: Deepak Ramappa , Thirumal Thanigaivelan
- Applicant: Deepak Ramappa , Thirumal Thanigaivelan
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
Embodiments of this method improve the results of a chemical mechanical polishing (CMP) process. A surface is implanted with a species, such as, for example, Si, Ge, As, B, P, H, He, Ne, Ar, Kr, Xe, and C. The implant of this species will at least affect dishing, erosion, and polishing rates of the CMP process. The species may be selected in one embodiment to either accelerate or decelerate the CMP process. The dose of the species may be varied over the surface in one particular embodiment.
Public/Granted literature
- US20090227087A1 METHOD TO IMPROVE UNIFORMITY OF CHEMICAL MECHANICAL POLISHING PLANARIZATION Public/Granted day:2009-09-10
Information query
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