Invention Grant
US07767590B2 Semiconductor device with spacer having batch and non-batch layers
有权
具有间隔物的半导体器件具有批次和非批次层
- Patent Title: Semiconductor device with spacer having batch and non-batch layers
- Patent Title (中): 具有间隔物的半导体器件具有批次和非批次层
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Application No.: US11458515Application Date: 2006-07-19
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Publication No.: US07767590B2Publication Date: 2010-08-03
- Inventor: Yen Ming Chen , Lin Jun Wu
- Applicant: Yen Ming Chen , Lin Jun Wu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/469
- IPC: H01L21/469 ; H01L21/31
Abstract:
A semiconductor device including a gate stack located over a substrate and a spacer located over the substrate and adjacent the gate stack. The spacer includes a plurality of layers, wherein at least one of the plurality of layers is a batch layer and at least one of the plurality of layers is a non-batch layer.
Public/Granted literature
- US20060252274A1 Semiconductor Device with Spacer Having Batch and Non-Batch Layers Public/Granted day:2006-11-09
Information query
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