Invention Grant
- Patent Title: Method for determining material interfacial and metrology information of a sample using atomic force microscopy
- Patent Title (中): 使用原子力显微镜测定样品的材料界面和计量学信息的方法
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Application No.: US11149789Application Date: 2005-06-09
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Publication No.: US07767961B2Publication Date: 2010-08-03
- Inventor: Justin Jai-Jen Hwu
- Applicant: Justin Jai-Jen Hwu
- Applicant Address: NL Amsterdam
- Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agency: Zilka-Kotab, PC
- Main IPC: G01N13/16
- IPC: G01N13/16

Abstract:
A method for determining interfacial information and critical dimensions of a sample using atomic force microscopy. Tip-specimen deconvolution is performed on the scan lines before the critical dimension information processing. Local maxima and minima or local slope change of each scan line are found on a plurality of scan lines. A best fit line is then found for the plurality of maxim and minima or slope change points. Two best fit lines may be found using a plurality of maxima or minima or slope change points. An intersection of the two best fit lines can be used to determine a critical dimension such as a transition point. Such a method may be used to determine a track width of a trapezoidal magnetic write head or may be used to determine the location of a flare point on a magnetic write head.
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