Invention Grant
US07767974B2 Thin-film transistor array substrate for x-ray detector and x-ray detector having the same
有权
用于x射线检测器和X射线检测器的薄膜晶体管阵列基板
- Patent Title: Thin-film transistor array substrate for x-ray detector and x-ray detector having the same
- Patent Title (中): 用于x射线检测器和X射线检测器的薄膜晶体管阵列基板
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Application No.: US12136398Application Date: 2008-06-10
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Publication No.: US07767974B2Publication Date: 2010-08-03
- Inventor: Kwan-Wook Jung , Dae-Ho Choo
- Applicant: Kwan-Wook Jung , Dae-Ho Choo
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2007-0056451 20070611
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
In a thin-film transistor (“TFT”) array substrate for an X-ray detector and an X-ray detector having the TFT array substrate, the TFT array substrate includes a gate wiring, a gate insulating layer, an active layer, a data wiring, a photodiode, an organic insulating layer and a bias wiring. The gate wiring is formed on an insulating substrate and includes a gate line and a gate electrode. The gate insulating layer covers the gate wiring. The active layer is formed on the gate insulating layer. The data wiring is formed on the gate insulating layer and includes a data line, source and drain electrodes. The photodiode includes lower and upper electrodes, and a photoconductive layer. The organic insulating layer covers the data wiring and the photodiode. The bias wiring is formed on the organic insulating layer. Thus, an aperture ratio and reliability are enhanced.
Public/Granted literature
- US20080302969A1 THIN-FILM TRANSISTOR ARRAY SUBSTRATE FOR X-RAY DETECTOR AND X-RAY DETECTOR HAVING THE SAME Public/Granted day:2008-12-11
Information query
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