Invention Grant
- Patent Title: Multi-layer chalcogenide devices
- Patent Title (中): 多层硫属化物装置
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Application No.: US11451913Application Date: 2006-06-13
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Publication No.: US07767992B2Publication Date: 2010-08-03
- Inventor: Regino Sandoval , Sergey A. Kostylev , Wolodymyr Czubatyj , Tyler Lowrey
- Applicant: Regino Sandoval , Sergey A. Kostylev , Wolodymyr Czubatyj , Tyler Lowrey
- Applicant Address: US MI Rochester Hills
- Assignee: Ovonyx, Inc.
- Current Assignee: Ovonyx, Inc.
- Current Assignee Address: US MI Rochester Hills
- Agent Kevin L. Bray
- Main IPC: H01L29/02
- IPC: H01L29/02
Abstract:
A multi-layer chalcogenide electronic device. The device includes an active region in electrical communication with two terminals, where the active region includes two or more layers. In one embodiment, the pore region includes two or more chalcogenide materials which differ in chemical composition. In another embodiment, the pore region includes one or more chalcogenide materials and a layer of Sb. The devices offer the advantages of minimal conditioning requirements, fast set speeds, high reset resistances and low set resistances.
Public/Granted literature
- US20070034849A1 Multi-layer chalcogenide devices Public/Granted day:2007-02-15
Information query
IPC分类:
