Invention Grant
- Patent Title: Resistance change memory device
- Patent Title (中): 电阻变化记忆装置
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Application No.: US11761758Application Date: 2007-06-12
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Publication No.: US07767993B2Publication Date: 2010-08-03
- Inventor: Haruki Toda , Koichi Kubo
- Applicant: Haruki Toda , Koichi Kubo
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L29/02
- IPC: H01L29/02

Abstract:
A resistance change memory device including a substrate, first and second wiring lines formed above the substrate to be insulated from each other, and memory cells disposed between the first and second wiring lines, wherein the memory cell includes: a variable resistance element for storing as information a resistance value; and a Schottky diode connected in series to the variable resistance element. The variable resistance element has: a recording layer formed of a composite compound containing at least one transition element and a cavity site for housing a cation ion; and electrodes formed on the opposite sides of the recording layer, one of which serves as a cation source in a write or erase mode for supplying a cation to the recording layer to be housed in the cavity site therein.
Public/Granted literature
- US20080002455A1 RESISTANCE CHANGE MEMORY DEVICE Public/Granted day:2008-01-03
Information query
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