Invention Grant
- Patent Title: Single-electron tunnel junction for complementary metal-oxide device and method of manufacturing the same
- Patent Title (中): 用于互补金属氧化物器件的单电子隧道结及其制造方法
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Application No.: US11846993Application Date: 2007-08-29
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Publication No.: US07767995B2Publication Date: 2010-08-03
- Inventor: Robert B. Staszewski , Renaldi Winoto , Dirk Leipold
- Applicant: Robert B. Staszewski , Renaldi Winoto , Dirk Leipold
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent John J. Patti; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
A method of providing a p-type substrate, disposing a pad oxide layer on the p-type substrate, disposing a nitride layer on the pad oxide layer, forming a nitride window in the nitride layer, disposing a field oxide in the nitride window, disposing a polysilicon gate over the field oxide, and diffusing a n-doped region in the p-type substrate, thereby forming at least one single-electron tunnel junction between the polysilicon gate and the n-doped region.
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