Invention Grant
- Patent Title: Formation of p-n homogeneous junctions
- Patent Title (中): 形成p-n均质结
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Application No.: US11855568Application Date: 2007-09-14
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Publication No.: US07768003B2Publication Date: 2010-08-03
- Inventor: Meng Tao , Longcheng Wang
- Applicant: Meng Tao , Longcheng Wang
- Applicant Address: US TX Austin
- Assignee: Board of Regents, The University of Texas System
- Current Assignee: Board of Regents, The University of Texas System
- Current Assignee Address: US TX Austin
- Agency: Chowdhury & Georgakis, P.C.
- Main IPC: H01L29/10
- IPC: H01L29/10
Abstract:
Methods, structures and devices are described, in which structures and devices have one or more p-n homo-junctions fabricated in solution. The junctions are formed by a sequential deposition of an oxide of copper from solution. Conduction type of the oxide of copper is controlled by pH of the solution.
Public/Granted literature
- US20090072231A1 Formation of p-n homogeneous junctions Public/Granted day:2009-03-19
Information query
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