Invention Grant
- Patent Title: Thin film transistor, method for manufacturing the same and display using the same
- Patent Title (中): 薄膜晶体管及其制造方法及其显示方法
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Application No.: US11985235Application Date: 2007-11-13
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Publication No.: US07768008B2Publication Date: 2010-08-03
- Inventor: Mamoru Ishizaki , Manabu Ito , Masato Kon , Osamu Kina , Ryohei Matsubara
- Applicant: Mamoru Ishizaki , Manabu Ito , Masato Kon , Osamu Kina , Ryohei Matsubara
- Applicant Address: JP
- Assignee: Toppan Printing Co., Ltd.
- Current Assignee: Toppan Printing Co., Ltd.
- Current Assignee Address: JP
- Agency: Squire, Sanders & Dempsey L.L.P.
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
One embodiment of the present invention is a thin film transistor including a gate electrode formed on an insulating substrate, a gate insulator formed on the gate electrode, a drain electrode and a source electrode formed on the gate insulator, an oxide semiconductor pattern formed between the drain electrode and the source electrode, and a sealing layer formed on the oxide semiconductor pattern.
Public/Granted literature
- US20090121225A1 Thin film transistor, method for manufacturing the same and display using the same Public/Granted day:2009-05-14
Information query
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