Invention Grant
- Patent Title: Vertical structure thin film transistor
- Patent Title (中): 垂直结构薄膜晶体管
-
Application No.: US10722818Application Date: 2003-11-25
-
Publication No.: US07768013B2Publication Date: 2010-08-03
- Inventor: Seong Hyun Kim , Taehyoung Zyung
- Applicant: Seong Hyun Kim , Taehyoung Zyung
- Applicant Address: KR
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR
- Agency: Blakely, Sokoloff, Taylor & Zafman
- Priority: KR10-2002-0079990 20021214
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/786
Abstract:
A vertical structure thin film transistor is provided. The vertical structure thin film transistor has a stacked structure of a substrate, a first electrode, a dielectric thin film, a second electrode, a semiconductor thin film, and a third electrode, wherein current flows between the second and third electrodes perpendicularly to the substrate and is modulated by an electric field generated from the first electrode parallel to the current.
Public/Granted literature
- US20040113152A1 Vertical structure thin film transistor Public/Granted day:2004-06-17
Information query
IPC分类:
