Invention Grant
- Patent Title: Light emitting diode and fabricating method thereof
- Patent Title (中): 发光二极管及其制造方法
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Application No.: US11109345Application Date: 2005-04-19
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Publication No.: US07768022B2Publication Date: 2010-08-03
- Inventor: Tzong-Liang Tsai , Way-Jze Wen , Chang-Han Chiang , Chih-Sung Chang
- Applicant: Tzong-Liang Tsai , Way-Jze Wen , Chang-Han Chiang , Chih-Sung Chang
- Applicant Address: TW
- Assignee: Epistar Corporation
- Current Assignee: Epistar Corporation
- Current Assignee Address: TW
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Priority: TW94101801A 20050121
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
A light emitting diode and its fabricating method are disclosed. A light emitting diode epitaxy structure is formed on a substrate, and then the light emitting diode epitaxy structure is etched to form a recess. The recess is then filled with a transparent dielectric material. An adhesive layer is utilized to adhere a conductive substrate and the light emitting diode epitaxy structure. Next, the substrate is removed.
Public/Granted literature
- US20060163592A1 Light emitting diode and fabricating method thereof Public/Granted day:2006-07-27
Information query
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