A field effect transistor (“FET”) is provided which includes an active semiconductor region including a channel region, a first source-drain region and a second source-drain region. A major surface of the active semiconductor region is divided into a mutually exclusive first portion and a second portion. A first liner applies a first stress to the first portion of the major surface, and a second liner applies a second stress to the second portion of the major surface. The first and second stresses are each selected from high tensile stress, high compressive stress and neutral stress, with the first stress being different from the second stress. The liners can help to differentiate a first operating current conducted by the first portion of the FET under one operating condition and a second operating current that is conducted by the second portion of the FET under a different operating condition.