Invention Grant
US07768044B2 Metal capacitor stacked with a MOS capacitor to provide increased capacitance density 有权
金属电容器堆叠有MOS电容器以提供增加的电容密度

Metal capacitor stacked with a MOS capacitor to provide increased capacitance density
Abstract:
An on-chip capacitive device comprises a semiconductor substrate, a MOS capacitor formed on the semiconductor substrate, and a metal interconnect capacitor formed at least in part in a region above the MOS capacitor. The MOS capacitor and the metal interconnect capacitor are connected in parallel to form a single capacitive device. The capacitance densities of the MOS capacitor and the metal interconnect capacitor are, thereby, combined. Advantageously, significant capacitance density gains can be achieved without additional processing steps.
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