Invention Grant
US07768044B2 Metal capacitor stacked with a MOS capacitor to provide increased capacitance density
有权
金属电容器堆叠有MOS电容器以提供增加的电容密度
- Patent Title: Metal capacitor stacked with a MOS capacitor to provide increased capacitance density
- Patent Title (中): 金属电容器堆叠有MOS电容器以提供增加的电容密度
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Application No.: US10903938Application Date: 2004-07-30
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Publication No.: US07768044B2Publication Date: 2010-08-03
- Inventor: Canzhong He , John A. Schuler , John M. Sharpe , Hong-Ha Vuong
- Applicant: Canzhong He , John A. Schuler , John M. Sharpe , Hong-Ha Vuong
- Applicant Address: US PA Allentown
- Assignee: Agere Systems Inc.
- Current Assignee: Agere Systems Inc.
- Current Assignee Address: US PA Allentown
- Agency: Ryan, Mason & Lewis, LLP
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L21/20 ; H01L21/336 ; H01L21/8234

Abstract:
An on-chip capacitive device comprises a semiconductor substrate, a MOS capacitor formed on the semiconductor substrate, and a metal interconnect capacitor formed at least in part in a region above the MOS capacitor. The MOS capacitor and the metal interconnect capacitor are connected in parallel to form a single capacitive device. The capacitance densities of the MOS capacitor and the metal interconnect capacitor are, thereby, combined. Advantageously, significant capacitance density gains can be achieved without additional processing steps.
Public/Granted literature
- US20060024905A1 Metal capacitor stacked with a MOS capacitor to provide increased capacitance density Public/Granted day:2006-02-02
Information query
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