Invention Grant
- Patent Title: Imager element, device and system with recessed transfer gate
- Patent Title (中): 成像元件,带凹槽传输门的器件和系统
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Application No.: US11746730Application Date: 2007-05-10
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Publication No.: US07768047B2Publication Date: 2010-08-03
- Inventor: Richard A. Mauritzson , Inna Patrick
- Applicant: Richard A. Mauritzson , Inna Patrick
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L31/062
- IPC: H01L31/062 ; H01L31/113

Abstract:
An imager element, device and imaging system image sensor pixel. The image sensor pixel includes a collection region, a floating diffusion region, and a transfer transistor having a recessed gate. The recessed gate is configured to couple the collection region to the floating diffusion region so that collected charge is transferred during activation. The recessed gate has an effective gate length greater than a physical gate length.
Public/Granted literature
- US20080277693A1 IMAGER ELEMENT, DEVICE AND SYSTEM WITH RECESSED TRANSFER GATE Public/Granted day:2008-11-13
Information query
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