发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US12248577申请日： 2008-10-09
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公开(公告)号： US07768063B2公开(公告)日： 2010-08-03
- 发明人: Ryota Katsumata , Masaru Kito , Yoshiaki Fukuzumi , Masaru Kidoh , Hiroyasu Tanaka , Hideaki Aochi , Yasuyuki Matsuoka
- 申请人： Ryota Katsumata , Masaru Kito , Yoshiaki Fukuzumi , Masaru Kidoh , Hiroyasu Tanaka , Hideaki Aochi , Yasuyuki Matsuoka
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2007-264858 20071010
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
A semiconductor device comprising: a semiconductor substrate; a first conductive layer provided on a surface of the substrate and serving as one of a source and a drain; a first insulating film provided on the first conductive layer; a gate electrode film provided on the first insulating film; a second insulating film provided on the gate electrode film; a gate opening provided so as to penetrate the second insulating film, the gate electrode film and the first insulating film to expose a part of the first conductive layer; a recess provided in the surface of the first conductive layer just below the gate opening; a gate insulator provided on the side surface of the gate opening and having a projecting shape at a portion between the first insulating film and the recess; a second conductive layer buried in the recess and in a bottom of the gate opening so as to be in contact with the gate insulator.
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