Invention Grant
US07768074B2 Dual salicide integration for salicide through trench contacts and structures formed thereby
有权
通过沟槽接触和由此形成的结构，通过双层自对准硅化物一体化
- Patent Title: Dual salicide integration for salicide through trench contacts and structures formed thereby
- Patent Title (中): 通过沟槽接触和由此形成的结构，通过双层自对准硅化物一体化
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Application No.: US12319209Application Date: 2008-12-31
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Publication No.: US07768074B2Publication Date: 2010-08-03
- Inventor: Oleg Golonzka , Bernhard Sell
- Applicant: Oleg Golonzka , Bernhard Sell
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Kathy J. Ortiz
- Main IPC: H01L23/62
- IPC: H01L23/62
Abstract:
Methods and associated structures of forming a microelectronic device are described. Those methods may include forming an NMOS silicide on an NMOS source/drain contact area, forming a first contact metal on the NMOS silicide, polishing the first contact metal to expose a top surface of a PMOS source/drain region, and forming a PMOS silicide on the PMOS source/drain region.
Public/Granted literature
- US20100164002A1 DUAL SALICIDE INTEGRATION FOR SALICIDE THROUGH TRENCH CONTACTS AND STRUCTURES FORMED THEREBY Public/Granted day:2010-07-01
Information query
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