Invention Grant
US07768085B2 Photodetector array using isolation diffusions as crosstalk inhibitors between adjacent photodiodes
有权
使用隔离扩散作为相邻光电二极管之间的串扰抑制剂的光电检测器阵列
- Patent Title: Photodetector array using isolation diffusions as crosstalk inhibitors between adjacent photodiodes
- Patent Title (中): 使用隔离扩散作为相邻光电二极管之间的串扰抑制剂的光电检测器阵列
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Application No.: US11548546Application Date: 2006-10-11
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Publication No.: US07768085B2Publication Date: 2010-08-03
- Inventor: Robin Wilson , Conor Brogan , Hugh J. Griffin , Cormac MacNamara
- Applicant: Robin Wilson , Conor Brogan , Hugh J. Griffin , Cormac MacNamara
- Applicant Address: GB Belfast, Northern Ireland
- Assignee: Icemos Technology Ltd.
- Current Assignee: Icemos Technology Ltd.
- Current Assignee Address: GB Belfast, Northern Ireland
- Agency: Panitch Schwarze Belisario & Nadel LLP
- Main IPC: H01L31/113
- IPC: H01L31/113
Abstract:
A photodetector array includes a semiconductor substrate having opposing first and second main surfaces, a first layer of a first doping concentration proximate the first main surface, and a second layer of a second doping concentration proximate the second main surface. The photodetector includes at least one conductive via formed in the first main surface and an anode/cathode region proximate the first main surface and the at least one conductive via. The via extends to the second main surface. The conductive via is isolated from the semiconductor substrate by a first dielectric material. The anode/cathode region is a second conductivity opposite to the first conductivity. The photodetector includes a doped isolation region of a third doping concentration formed in the first main surface and extending through the first layer of the semiconductor substrate to at least the second layer of the semiconductor substrate.
Public/Granted literature
- US20070085117A1 Photodetector array using isolation diffusions as crosstalk inhibitors between adjacent photodiodes Public/Granted day:2007-04-19
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