Invention Grant
- Patent Title: Nonvolatile memory apparatus
- Patent Title (中): 非易失存储器
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Application No.: US11865721Application Date: 2007-10-01
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Publication No.: US07768110B2Publication Date: 2010-08-03
- Inventor: Hirotaka Nishizawa , Yosuke Yukawa , Takashi Totsuka
- Applicant: Hirotaka Nishizawa , Yosuke Yukawa , Takashi Totsuka
- Applicant Address: JP Tokyo
- Assignee: Renesas Technology Corp.
- Current Assignee: Renesas Technology Corp.
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP11-344310 19991203
- Main IPC: G06K19/067
- IPC: G06K19/067 ; H01L23/48

Abstract:
An IC card capable of reinforcing the prevention of the electrostatic damage without causing a rise in the cost of a semiconductor integrated circuit chip. The semiconductor integrated circuit chip (2) is mounted on a card substrate (1), and plural connection terminals (3) are exposed. The connection terminals are connected to predetermined external terminals (4) of the semiconductor integrated circuit chip, first overvoltage protection elements (7, 8, 9) connected to the external terminals are integrated in the semiconductor integrated circuit chip, and second overvoltage protection elements such as surface-mount type varistors (11) connected to the connection terminals are mounted on the card substrate. The varistors are variable resistor elements having a current tolerating ability greater than that of the first overvoltage protection elements. The varistors have been selected by taking into consideration a relationship between the characteristics and the ability of the first overvoltage protection elements contained in the semiconductor integrated circuit chip, and exhibit the effect for preventing the electrostatic damage.
Public/Granted literature
- US20080023562A1 IC CARD Public/Granted day:2008-01-31
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