Invention Grant
US07768129B2 Metal etching method for an interconnect structure and metal interconnect structure obtained by such method
有权
通过这种方法获得的互连结构和金属互连结构的金属蚀刻方法
- Patent Title: Metal etching method for an interconnect structure and metal interconnect structure obtained by such method
- Patent Title (中): 通过这种方法获得的互连结构和金属互连结构的金属蚀刻方法
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Application No.: US10544607Application Date: 2004-02-03
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Publication No.: US07768129B2Publication Date: 2010-08-03
- Inventor: Marcel Eduard Broekaart , Arnoud Willem Fortuin
- Applicant: Marcel Eduard Broekaart , Arnoud Willem Fortuin
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP03290320 20030207
- International Application: PCT/IB2004/000303 WO 20040203
- International Announcement: WO2004/070818 WO 20040819
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/528 ; H01L23/532 ; H01L21/3213 ; H01L21/768
Abstract:
A metal interconnects structure, comprises a substrate (11), a dielectric layer (12) lying above the substrate, a stop layer (13) for metal etching lying above the dielectric layer, a metal layer (15′) lying above the stop layer, said metal layer being patterned according to a desired pattern.
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