Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12212186Application Date: 2008-09-17
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Publication No.: US07768138B2Publication Date: 2010-08-03
- Inventor: Masatoshi Shinagawa
- Applicant: Masatoshi Shinagawa
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2007-275021 20071023; JP2008-105487 20080415
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
In a semiconductor device, a semiconductor chip is connected to a board through an interconnection layer. A plurality of first terminals, a plurality of second terminals and a plurality of third terminals are provided on the board, the interconnection layer and the semiconductor chip, respectively. The second terminals are connected to the first terminals through the board. The third terminals are connected to the second terminals. The interconnection layer is rotatable about a rotation axis perpendicular to an upper surface of the interconnection layer. A first terminal having a specific function out of the first terminals and a third terminal having the specific function out of the third terminals are connected to each other by rotating the interconnection layer.
Public/Granted literature
- US20090101896A1 SEMICONDUCTOR DEVICE Public/Granted day:2009-04-23
Information query
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