Invention Grant
- Patent Title: Power semiconductor module
- Patent Title (中): 功率半导体模块
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Application No.: US10535622Application Date: 2003-10-27
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Publication No.: US07768139B2Publication Date: 2010-08-03
- Inventor: Wolfgang Knapp , Helmut Keser
- Applicant: Wolfgang Knapp , Helmut Keser
- Applicant Address: CH Zurich
- Assignee: ABB Research Ltd
- Current Assignee: ABB Research Ltd
- Current Assignee Address: CH Zurich
- Agency: Buchanan Ingersoll & Rooney PC
- Priority: EP02406028 20021127
- International Application: PCT/CH03/00700 WO 20031027
- International Announcement: WO2004/049433 WO 20040610
- Main IPC: H01L23/28
- IPC: H01L23/28 ; H01L23/34
Abstract:
A power semiconductor module is disclosed with a housing that includes a hardenable plastic casting compound and a base plate, wherein electric power semiconductor components are arranged on a section of the surface of the base plate that faces the housing via an insulating layer. At least the section of the surface of the base plate that faces the housing and contains the electric power semiconductor components is encapsulated in the housing wherein the hardenable plastic casting compound has a hardness between 30 and 95 ShoreA.
Public/Granted literature
- US20060238983A1 Power semiconductor module Public/Granted day:2006-10-26
Information query
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