Invention Grant
- Patent Title: Highly emissive material, structure made from highly emissive material, and method of making the same
- Patent Title (中): 高发射材料，由高发射材料制成的结构及其制造方法
-
Application No.: US11871657Application Date: 2007-10-12
-
Publication No.: US07768207B2Publication Date: 2010-08-03
- Inventor: Gary R. Allen , Deeder Aurongzeb
- Applicant: Gary R. Allen , Deeder Aurongzeb
- Applicant Address: US NY Schenectady
- Assignee: General Electric Company
- Current Assignee: General Electric Company
- Current Assignee Address: US NY Schenectady
- Agency: Fay Sharpe LLP
- Main IPC: H01J17/16
- IPC: H01J17/16
Abstract:
The invention relates to a high temperature material modified to exhibit enhanced IR emittance in the wavelength range where a black body operating at the same high temperature exhibits peak emittance, to a light-transmissive body comprising the high temperature material, to a high intensity lamp comprising the high temperature material, and to a method of preparing the same.
Public/Granted literature
- US20090096342A1 HIGHLY EMISSIVE MATERIAL, STRUCTURE MADE FROM HIGHLY EMISSIVE MATERIAL, AND METHOD OF MAKING THE SAME Public/Granted day:2009-04-16
Information query
