Invention Grant
US07768312B2 Semiconductor device and driver control method 有权
半导体器件和驱动器控制方法

Semiconductor device and driver control method
Abstract:
A semiconductor device of the invention has a plurality of P-channel transistors, to which resistance elements are inserted in series, prepared on a pull-up side of a driver such that an ON resistance value on the P-channel transistor side and a resistance value of the resistance element can be selected. In addition, also on a pull-down side of the driver, a plurality of N-channel transistors to which resistance elements are inserted in series are prepared such that an ON resistance value on the N-channel transistor side and a resistance value of the resistance element can be selected. A driver section having a linear current-voltage characteristic is realized by combination of those described.
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