Invention Grant
- Patent Title: Semiconductor device and driver control method
- Patent Title (中): 半导体器件和驱动器控制方法
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Application No.: US12285979Application Date: 2008-10-17
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Publication No.: US07768312B2Publication Date: 2010-08-03
- Inventor: Yukitoshi Hirose
- Applicant: Yukitoshi Hirose
- Applicant Address: JP Chuo-ku, Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Chuo-ku, Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JPP2007-271144 20071018
- Main IPC: H03K19/094
- IPC: H03K19/094

Abstract:
A semiconductor device of the invention has a plurality of P-channel transistors, to which resistance elements are inserted in series, prepared on a pull-up side of a driver such that an ON resistance value on the P-channel transistor side and a resistance value of the resistance element can be selected. In addition, also on a pull-down side of the driver, a plurality of N-channel transistors to which resistance elements are inserted in series are prepared such that an ON resistance value on the N-channel transistor side and a resistance value of the resistance element can be selected. A driver section having a linear current-voltage characteristic is realized by combination of those described.
Public/Granted literature
- US20090102511A1 Semiconductor device and driver control method Public/Granted day:2009-04-23
Information query
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