Invention Grant
- Patent Title: Radiation-tolerant flash-based FPGA memory cells
- Patent Title (中): 基于闪存的耐辐射FPGA存储单元
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Application No.: US12124661Application Date: 2008-05-21
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Publication No.: US07768317B1Publication Date: 2010-08-03
- Inventor: Fethi Dhaoui , Zhigang Wang , John McCollum , Richard Chan , Vidyadhara Bellippady
- Applicant: Fethi Dhaoui , Zhigang Wang , John McCollum , Richard Chan , Vidyadhara Bellippady
- Applicant Address: US CA Mountain View
- Assignee: Actel Corporation
- Current Assignee: Actel Corporation
- Current Assignee Address: US CA Mountain View
- Agency: Lewis and Roca LLP
- Main IPC: H03K19/094
- IPC: H03K19/094

Abstract:
A radiation-tolerant flash-based FPGA switching element includes a plurality of memory cells each having a memory transistor and a switch transistor sharing a floating gate. Four such memory cells are combined such that two sets of two switch transistors are wired in series and the two sets of series-wired switch transistors are also wired in parallel. The four memory transistors associated with the series-parallel combination of switch transistors are all programmed to the same on or off state. The series combination prevents an “on” radiation-hit fault to one of the floating gates from creating a false connection and the parallel combination prevents an “off” radiation-hit fault to one of the floating gates from creating a false open circuit.
Public/Granted literature
- US3200055A Process for the electrolytic production of hyperpure zinc Public/Granted day:1965-08-10
Information query
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