Invention Grant
US07768341B2 Semiconductor charge pump using MOS (metal oxide semiconductor) transistor for current rectifier device
有权
半导体电荷泵使用MOS(金属氧化物半导体)晶体管用于电流整流器件
- Patent Title: Semiconductor charge pump using MOS (metal oxide semiconductor) transistor for current rectifier device
- Patent Title (中): 半导体电荷泵使用MOS(金属氧化物半导体)晶体管用于电流整流器件
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Application No.: US12424290Application Date: 2009-04-15
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Publication No.: US07768341B2Publication Date: 2010-08-03
- Inventor: Toshimasa Namekawa , Hiroshi Ito
- Applicant: Toshimasa Namekawa , Hiroshi Ito
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-323601 20051108; JP2006-266050 20060928
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
A semiconductor charge pump includes a plurality of P-channel MOS transistors being connected in series, a plurality of first pumping capacitors one electrode of each of which is connected to a connection point of each of the P-channel MOS transistors, a clock signal generating circuit which generates first and second clock signals whose phases are different from each other by 180 degrees, the first and second clock signals being alternately supplied to the other electrodes of the first pumping capacitors. The semiconductor charge pump further includes a plurality of dynamic level converter circuits each including a resistor element and a second pumping capacitor and connected to each of gates of the P-channel MOS transistors.
Public/Granted literature
- US20090201076A1 SEMICONDUCTOR CHARGE PUMP USING MOS (METAL OXIDE SEMICONDUCTOR) TRANSISTOR FOR CURRENT RECTIFIER DEVICE Public/Granted day:2009-08-13
Information query
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