Invention Grant
- Patent Title: Start-up circuit for bandgap reference
- Patent Title (中): 启动电路用于带隙参考
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Application No.: US11820181Application Date: 2007-06-18
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Publication No.: US07768343B1Publication Date: 2010-08-03
- Inventor: Dennis Sinitsky
- Applicant: Dennis Sinitsky
- Applicant Address: BM Hamilton
- Assignee: Marvell International Ltd.
- Current Assignee: Marvell International Ltd.
- Current Assignee Address: BM Hamilton
- Main IPC: G05F1/10
- IPC: G05F1/10 ; G05F3/02

Abstract:
A start-up circuit for a bandgap reference circuit includes a sampling circuit for sampling current through a diode in one of first and second diode/resistor networks that respectively provide complementary PTAT and CTAT characteristics in the bandgap reference, and a current injection circuit to inject current to a PMOS bus of the bandgap reference if the sampled current is not higher than a pre-designated low value. By virtue of this operation, since current through the diode itself is sampled, the start-up circuit ensures that current through the sampled diode is higher than the pre-designated low value, thereby leading to rapid start-up of the bandgap reference to a stable operating point.
Information query
IPC分类: