Invention Grant
- Patent Title: High-frequency circuit
- Patent Title (中): 高频电路
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Application No.: US12144103Application Date: 2008-06-23
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Publication No.: US07768348B2Publication Date: 2010-08-03
- Inventor: Seiichi Banba
- Applicant: Seiichi Banba
- Applicant Address: JP Osaka
- Assignee: Sanyo Electric Co.
- Current Assignee: Sanyo Electric Co.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2007-164802 20070622
- Main IPC: H03F3/45
- IPC: H03F3/45

Abstract:
The potential of a source terminal of a transistor is fixed; a load is connected to a drain terminal of the transistor; and an input signal is received by a gate terminal of the transistor. A series circuit including an inductor and a capacitor connected in series is provided between a connection point of the drain terminal of the transistor and the load and an output terminal of a high-frequency circuit. A band-pass filter having a prescribed characteristic is configured by an output equivalent circuit expressing an output impedance of the transistor, the load, and the series circuit.
Public/Granted literature
- US20090009244A1 HIGH-FREQUENCY CIRCUIT Public/Granted day:2009-01-08
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