Invention Grant
- Patent Title: Radio-frequency power amplifier
- Patent Title (中): 射频功率放大器
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Application No.: US12399452Application Date: 2009-03-06
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Publication No.: US07768354B2Publication Date: 2010-08-03
- Inventor: Shingo Matsuda , Hirokazu Makihara , Kazuki Tateoka , Masahiko Inamori
- Applicant: Shingo Matsuda , Hirokazu Makihara , Kazuki Tateoka , Masahiko Inamori
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2008-100299 20080408
- Main IPC: H03F3/04
- IPC: H03F3/04

Abstract:
A bias circuit operable to supply a bias current to a first transistor includes: a second transistor having a collector terminal connected to a first power supply; a first resistance element having one end connected to an emitter terminal of the second transistor and having the other end connected to a base terminal of the first transistor; a second resistance element having one end connected to the emitter terminal of the second transistor and having the other end connected to ground potential; at least one third resistance element provided between a base terminal of the second transistor and a second power supply; and a plurality of temperature compensation circuits connected to the base terminal of the second transistor which are operable to control a base potential of the second transistor so that the potential falls as a temperature rises.
Public/Granted literature
- US20090251220A1 RADIO-FREQUENCY POWER AMPLIFIER Public/Granted day:2009-10-08
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