Invention Grant
- Patent Title: Plasma processing system ESC high voltage control
- Patent Title (中): 等离子处理系统ESC高压控制
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Application No.: US11770606Application Date: 2007-06-28
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Publication No.: US07768766B2Publication Date: 2010-08-03
- Inventor: Seyed Jafar Jafarian-Tehrani , Ralph Jan-Pin Lu
- Applicant: Seyed Jafar Jafarian-Tehrani , Ralph Jan-Pin Lu
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: IP Strategy Group, P.C.
- Main IPC: H01L21/683
- IPC: H01L21/683 ; H01T23/00 ; B23B31/28 ; B05C13/00 ; B05C13/02 ; B05C21/00
Abstract:
A plasma processing system is disclosed. The plasma processing system may include an electrostatic chuck (ESC) positioned inside a plasma processing chamber and configured to support a wafer. The ESC may include a positive terminal (+ESC) for providing a first force to the wafer and a negative terminal (−ESC) for providing a second force to the wafer. The plasma processing system may also include a first trans-impedance amplifier (TIA) and a second TIA configured to measure a first set of voltages for calculating a value of a positive load current applied to the positive terminal. The plasma processing system may also include a third TIA and a fourth TIA configured to measure a second set of voltages for calculating a value of a negative load current applied to the negative terminal.
Public/Granted literature
- US20080297971A1 PLASMA PROCESSING SYSTEM ESC HIGH VOLTAGE CONTROL Public/Granted day:2008-12-04
Information query
IPC分类:
