Invention Grant
US07768768B2 Semiconductor device including power switch and power reinforcement cell
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半导体器件包括电源开关和电源增强电池
- Patent Title: Semiconductor device including power switch and power reinforcement cell
- Patent Title (中): 半导体器件包括电源开关和电源增强电池
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Application No.: US12078764Application Date: 2008-04-04
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Publication No.: US07768768B2Publication Date: 2010-08-03
- Inventor: Taro Sakurabayashi
- Applicant: Taro Sakurabayashi
- Applicant Address: JP Kawasaki, Kanagawa
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: JP Kawasaki, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2007-099338 20070405
- Main IPC: H01L23/58
- IPC: H01L23/58

Abstract:
A semiconductor device according to one embodiment includes a cell disposition region in which plural basic cells are disposed and a basic power supply wiring. In the cell disposition region are disposed a primitive cell connected to the basic power supply wiring and a high current consumption cell connected to the basic power supply wiring. Furthermore, in the cell disposition region are disposed regularly plural ordinary power switch cells that supply a first current to the primitive cell respectively. The power reinforcement cell including a power switch cell configured so as to flow a predetermined current to the high current consumption cell is disposed near the high current consumption cell.
Public/Granted literature
- US20080246108A1 Semiconductor device including power switch and power reinforcement cell Public/Granted day:2008-10-09
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