Invention Grant
- Patent Title: Feedback structure for an SRAM cell
- Patent Title (中): SRAM单元的反馈结构
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Application No.: US11969589Application Date: 2008-01-04
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Publication No.: US07768820B2Publication Date: 2010-08-03
- Inventor: Theodore W. Houston , Howard L. Tigelaar
- Applicant: Theodore W. Houston , Howard L. Tigelaar
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Rose Alyssa Keagy; W. James Brady; Frederick J. Telecky, Jr.
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
Embodiments of the present disclosure provide a feedback structure, a method of constructing a feedback structure and an integrated circuit employing the feedback structure. In one embodiment, the feedback structure is for use with an integrated circuit and includes a local interconnect configured to electrically connect an output of a CMOS inverter to another circuit in the integrated circuit. Additionally, the feedback structure also includes an interconnect extension to the local interconnect configured to proximately extend along a gate structure of the CMOS inverter to provide a reactive coupling between the output and the gate structure.
Public/Granted literature
- US20090175062A1 FEEDBACK STRUCTURE FOR AN SRAM CELL Public/Granted day:2009-07-09
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