Invention Grant
US07768821B2 Non-volatile SRAM memory cell equipped with mobile gate transistors and piezoelectric operation
有权
非易失性SRAM存储单元配有移动栅极晶体管和压电操作
- Patent Title: Non-volatile SRAM memory cell equipped with mobile gate transistors and piezoelectric operation
- Patent Title (中): 非易失性SRAM存储单元配有移动栅极晶体管和压电操作
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Application No.: US12169264Application Date: 2008-07-08
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Publication No.: US07768821B2Publication Date: 2010-08-03
- Inventor: Olivier Thomas , Michael Collonge , Maud Vinet
- Applicant: Olivier Thomas , Michael Collonge , Maud Vinet
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique
- Current Assignee: Commissariat a l'Energie Atomique
- Current Assignee Address: FR Paris
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR0756348 20070709
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/34
Abstract:
The present application relates to a non-volatile random-access memory cell equipped with a suspended mobile gate and with piezoelectric means for operating the gate.
Public/Granted literature
- US20090016095A1 NON-VOLATILE SRAM MEMORY CELL EQUIPPED WITH MOBILE GATE TRANSISTORS AND PIEZOELECTRIC OPERATION Public/Granted day:2009-01-15
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