A memory array in a memory device is coupled to an analog I/O data interface that enables analog voltage levels to be written to the memory array. The I/O interface is comprised of a plurality of analog data paths that each includes a capacitor for storing charge corresponding to a target voltage to which a selected memory cell, coupled to its respective data path, is to be programmed. A plurality of comparators can be included in the I/O interface, with each such comparator coupled to a respective bit line. Such a comparator can compare a threshold voltage of a selected memory cell to its target voltage and inhibits further programming when the threshold voltage equals or exceeds the target voltage.