A method of programming a non-volatile memory device includes, a bit line, to which a program-inhibited cell is connected, being precharged. After precharging the bit line, a program voltage is applied to a first word line selected for program. When a memory cell connected to a second word line, which is adjacent to the first word line in a direction of a drain select line, is a cell to be programmed, a first pass voltage is applied to the second word line and a second pass voltage is applied to the remaining word lines other than the first and second word lines.