Invention Grant
US07768834B2 Non-volatile storage system with initial programming voltage based on trial
有权
基于试用的初始编程电压的非易失性存储系统
- Patent Title: Non-volatile storage system with initial programming voltage based on trial
- Patent Title (中): 基于试用的初始编程电压的非易失性存储系统
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Application No.: US12493040Application Date: 2009-06-26
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Publication No.: US07768834B2Publication Date: 2010-08-03
- Inventor: Teruhiko Kamei , Yan Li
- Applicant: Teruhiko Kamei , Yan Li
- Applicant Address: US CA Milpitas
- Assignee: SanDisk Corporation
- Current Assignee: SanDisk Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Vierra Magen Marcus & DeNiro LLP
- Main IPC: G11C16/06
- IPC: G11C16/06
Abstract:
A trial programming process is performed for a first set of one or more non-volatile storage elements to test usage of the non-volatile storage system. Based on this trial programming, a programming signal is calibrated by adjusting its initial magnitude. The calibrated programming signal is then used to program a second set of non-volatile storage elements (which may or may not include the first set).
Public/Granted literature
- US20090257282A1 NON-VOLATILE STORAGE SYSTEM WITH INITIAL PROGRAMMING VOLTAGE BASED ON TRIAL Public/Granted day:2009-10-15
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